NTS12120EMFST1G
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NTS12120EMFST1G
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NTS12120EMFST1G

Brand:ON
Model:NTS12120EMFST1G
stock:11167
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status stop production
speed Rapid recovery=< 500ns,> 200mA(Io)
working temperature -
Encapsulation/Housing 8-PowerTDFN,5 feedthrough
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
Supplier device packaging 5-DFN(5x6)(8-SOFL)
Diode type Schottky barrier
Voltage DC reverse (Vr) (maximum) 120 V
Current average rectification (Io) 12A
Voltage at different If - forward (Vf) 830 mV @ 12 A
Reverse recovery time (trr) -
Current - reverse leakage at different Vr 55 µA @ 120 V
Capacitance at different Vr and F -
Common problem
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